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 NEC's LOW POWER UPB1008K GPS RF RECEIVER
FEATURES
* LOW POWER CONSUMPTION: 52 mW * DUAL-CONVERSION IQ DOWN CONVERTER1: Reference frequency: REFin = 27 MHz * PSEUDO-BASEBAND WITH 2-BIT DIGITIZED OUTPUT * ON-CHIP LNA, ON-CHIP FREQUENCY SYNTHESIZER, IF AGC AMPLIFIER: with 45 dB typical range of adjustable gain * SMALL 36 PIN QFN PACKAGE: Flat lead style for better RF performance
Note: 1. Based on eRide's proprietary GPS DSP architecture
BLOCK DIAGRAM
PIN 1 -
AGC
OSC PD 1/2
UPB1008K
LNA
Dividers
IQ DEMO
ADC ADC
1stMIX
APPLICATIONS
* E911 ENABLED MOBILE PHONE * IN-VEHICLE NAVIGATION SYSTEMS * LOW POWER HANDHELD GPS RECEIVER * PC/PDA+GPS INTEGRATION * ASSET TRACKING
DESCRIPTION
NEC's UPB1008K is a Silicon RFIC especially designed for handheld low power/low cost GPS receivers. The IC combines an LNA, followed by a double-conversion RF/IF downconverter block and a PLL frequency synthesizer on one chip. The second IF Freqency is a pseudo- baseband signal into a on-chip 2-bit A/D converters.The device can operate on a supply voltage as low as 2.7 V, and is a housed in a small 36 pin QFN (Quad, Flat, No-lead) package, resulting in a very low power consumption and reduced board space. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
RF APPLICATION DIAGRAM
Nyquist Filters 1st Mixer LNA RF SAW TANK /2 /4 2-bit ADC IF filter AGC ISign
BASEBAND I C
2-bit ADC
IMag QSign QMag
Loop Filter
/6 /7
/2 PLL Frequency Counters I/Q Balance Regulator Circuitry
/8 /2
REFin 27 MHz
Reference Clock
California Eastern Laboratories
UPB1008K ADVANCED GPS COMPLETE SOLUTION
e911
AUTOMOTIVE
eYELLOW PAGES
PERSONAL GPS
ASSET TRACKING
NETWORK TRACKING
eRide NAVIGATION SOFTWARE & DRIVERS
TEMP TIME FREQ UART
GAIN CONTROL
ADC OPUS STATE MACHINE PLL ADC
eRide SMART SERVER
ACQUISITION
TRACKING
UPB1008K
Opus 1
eRide WORLDWIDE REFERENCE STATION NETWORK
ADVANCED GPS COMPLETE SOLUTION
"NEC Corporation and eRide, Inc. have teamed to provide an advanced positioning solution delivering high GPS performance, accuracy, integration and architecture flexibility. The chip set combines CEL's UPB1008K receiver IC with eRide's Opus One SOC (System-on-a-Chip) Baseband ASIC and is suitable for standard GPS products as well as Cellular Handset applications. Also provided are scalable client navigation software and drivers, plus location-aiding data from eRide's Smart Server. Together, they offer a complete hardware/infrastructure solution. The chip set's design allows it to operate independently of wireless interface standards - and independently of the host product's CPU and Operating System. This unique approach to system integration makes it easy to deploy the chip set into an wireless application, in any wireless network. A "Universal Hardware" solution, the design promises lower manufacturing costs and, ultimately lower cost to the consumer. The chip set's advanced positioning architecture offers unmatched sensitivity providing fast, accurate positioning architecture offers unmatched sensitivity providing fast and accurate position fixes, even when indoors or in deep in urban canyons."
HIGH PERFORMANCE GPS OMNI MODE
LI, C/A code receiver Performance Time to First Fix w/ aiding Time to First Fix w/o aiding Accuracy Sensitivity Indoor 5-7sec 10-20sec 10-25m cep -155dBm in 1sec dwells Outdoor 1-3sec 3-5sec 2-5m cep -142dBm in two 10msec dwells
Superior performance in high reflection indoor environments and in urban canyon types of outdoor environments
POWER DISSIPATION
First Fix Tracking Stand By 400 mW 200-300 mW 30 mW
UPB1008K ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = 3.0 V, unless otherwise specified)
SYMBOLS ICC VCC ICC_PD ICC rf ICC lo ICC pll ICC bb ICC if ICC lna PARAMETERS AND CONDITIONS Total Circuit Current, No Signals Supply Voltage Power down current, PIN 13 = VIL RF Block Circuit Current (pin 3), No signal VCO Block Circuit Current (pin 7), No signal PLL Block Circuit Current (pin 9), No signal Baseband Block Circuit Current (pin 23), No signal, open load IF Block Circuit Current (pin 28) , No signal Pre-Amplifier Open Connector Current (pin 36), No signal UNITS mA V A A mA mA mA mA mA MIN 14 2.7 - 0.4 4.1 2.7 2.5 2.7 1.0 TYP 18 3.0 1 0.5 5.6 3.6 3.4 3.7 1.4 MAX 23.5 3.3 10 0.7 7.2 4.7 4.3 4.7 1.8
LNA/RF DOWNCONVERTER (fRFin = 1575.42 MHz, f1stLOin = 1400 MHz, PLO = -10 dBm, f1stIF = 175 MHz, Pin 13: VIL = 3 V, ZL differential = 32 & ZS = opt) SYMBOLS CGLNA_MIX NFLNA_MIX P1dBLNA_MIX ZLNAin ZMIXout ALO-IF ALO-RF PLL SYMBOLS ICPOH ICPOL fPD SYMBOLS VREFin fREF VT C/N PARAMETERS AND CONDITIONS PLL Charge Pump High Side Current @ VCPout = VCC/2 PLL Charge Pump Low Side Current @ VCPout = VCC/2 Phase Comparison Frequency PARAMETERS AND CONDITIONS Reference input minimum level Input Frequency of Reference Input VCO Control Voltage, PLL Locked VCO C/N, 1kHz, Loop band width = 5 kHz UNITS A A MHz UNITS mVpp MHz V dBc/Hz MIN - - - MIN 50 - 0.8 57 TYP 200 -200 13.5 TYP 200 27 1.5 62 MAX - - - MAX - - 2.2 - PARAMETERS AND CONDITIONS Power conversion gain from 2nd LNA/mixer to 1st IF, PRFin = -50 dBm Noise Figure of 2nd LNA/mixer(SSB), Input matched 1 dB Compression refer to source, Input matched RF Input Impedance of LNA IF Output Impedance of Mixer Local Signal Leak to IF, f1stLOin=1400 MHz, PLO = 0 dBm Local Signal Leak to RF, f1stLOin=1400 MHz, PLO = 0 dBm UNITS dB dB dBm Ohm Ohm dBm dBm MIN 18 - - - - - TYP 23 5 -38 31 32 -35 -50 MAX 28 - - - - -
CRYSTAL OSCILLATOR/REVERENCE AMPLIFIER BLOCK
AGC AMPLIFIER, I-Q DEMODULATOR, and ADC BLOCK(f1stIFin = 175 MHz, Zin = 600) SYMBOLS CGAGC/MIX PARAMETERS AND CONDITIONS Maximum voltage conversion gain of AGC amplifier/ I-Q mixer, Pin = -60 dBm, VAGC = 0.5 V, Unmatched Minimum voltage conversion gain of AGC amplifier/ I-Q mixer, Pin = -60 dBm, VAGC = 2.0 V, Unmatched AGC control range, VAGC = 0.5 V to 2 V 1 dB compression input to AGC amplifier, set voltage gain = 30 dB AGC control voltage UNITS dB dB dB dBm V MHz V dB % % MIN - - 25 - 0.5 - - 4.0 50 50 TYP 30 -15 45 -45 - 10 2.1 6.5 - - MAX - - - - 2.0 - 2.8 - - -
AAGC/MIX P1dBAGC VAGC
BW 3dB Mixer Bandwidth IQ BalanceControl Voltage, Gain(Ich) = Gain (Qch) VIQ-C AIQ-C IQ Balance Control Gain Range, VIQ-C = 0 to 3 V Duty Ich Mag Bit Output Pulse Duty, P1stIFin = -84 dBm Ich VAGC = 0.5 V, VIQ-C = 0 V Duty Qch Mag Bit Output Pulse Duty, PIF2in = -88 dBm Qch VAGC = 0.5 V, VIQ-C = 0 V BASEBAND AMPLIFIER BLOCK (ZS = 2k & ZL = 2 k) SYMBOLS PARAMETERS AND CONDITIONS VBBOH Baseband output logic high, CL = 10 pF VBBOL Baseband output logic low, CL = 10 pF
UNITS V V
MIN 2.0 0
TYP - -
MAX - 0.5
UPB1008K ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25C)
SYMBOLS VCC PD TOP TSTG ICC_total PARAMETERS Supply Voltage4 Total Power Dissipation3 Operating Temperature Storage Temperature Total Circuit Current4 UNITS VCC mW C C RATINGS 3.6 361 -40 to +85 -55 to +150
RECOMMENDED OPERATING CONDITIONS
SYMBOLS VCC TOP fRFin fREFin f1stLO f1stIFin f2ndLOin VIH VIL PARAMETERS Supply Voltage Operating Temperature RF Input Frequency Reference Frequency 1st LO Oscillating Frequency 1st IF Input Frequency 2nd LO Input Frequency Power Down Control Voltage "High" Power Down Control Voltage "Low" UNITS MIN V 2.7 C -40 MHz MHz MHz MHz MHz V V 2 0 TYP 3.0 +25 1575 27 1400 175 175 VCC 0.5 MAX 3.3 +85
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. More than two items must not be reached simultaneously. 3. TA = +85C, mounted on a 50 x 50 x 1.6 mm double-sided copper clad epoxy glass PWB. 4. TA = 25C
APPLICATION CIRCUIT
0.1uF 15pF IN VCC 15pF SAW OUT OUTb
1:16
INb
1.2nH
200
0.1uF
GNDanalog
LNAbias
Mixout1
Mixout2
VCC
VAGC
IFin1
IFin2
Vref
VCCanalog 100nF
36
35
34
33
32
31
30
29
28
VCC VCC 43K .1pF 12pF 6.8nH 3.3nH SAW FILTER RF_in 12pF NE662MO4 100nF GNDIo
4 24
300 MATCHING NETWORK VCC
GND1na
1
AGC
27
21FoutI 150pF
2
1stMIX LNA
IQ_DEMO
LNAin
26
21Foutb
VCCrf
3
25
DCoffsetI 100nF DCoffsetb VCC
1stLO-OSC1 12pF 1stLO-OSC2 12pF VCC VCCIo 100nH PDout 3.3nH 3.3nH
5
1/2 1/4 Vth
23
VCCbb 100nF
6
22
I_mag
OSC
7
1/2
2Bit ADC
21
I_sign I_mag Q_sign I_sign Q_sign
1/6.375
8
PD 2Bit ADC 1/2
20
9
19
Q_mag Q_mag
D0 15K 15K 22pF 1.2K
Vccdig
CP
UPB1008K
Vagc
10 11 12 13 14 15 16 17 18
VCC PD
0.01uF
DCoffsetQb
GNDdig
100nF
DCoffsetQ
21FoutQb
21FoutQ
GNDbb
Ic_cntl
ic_cntl REFin
Refin
100nF 150pF 1OOnF
PD
UPB1008K PIN FUNCTIONS
Pin No. Symbol Function and Application Internal Equivalent Circuit
3
1 2
GNDlna LNAin
Ground pin of LNA
2
36
Input pin of low noise amplifier. It is a single-ended open collector design. Capacitive coupling is required; external matching will improve gain or NF.
Regulator
GND
Bias
r=6.5k
VCC
1
3
VCCrf
Supply voltage pin of LNA, RF mixer and VCO voltage regulator. Ground pin of 1st LO Oscillator circuit and RF Mixer. Pin 5 & 6 are base pins of the differential amplifier for 1st LO oscillator. These pins require an LC (varacator) tank circuit to oscillate at around 1400 MHz. Supply voltage pin of oscillator circuit for 1st LO Oscillator and RF mixer
3
7
r = 410
4
GNDlo
c=1.8p
5 6
1stLO-OSC1 1stLO-OSC2
6
c=1.8p
r=300
r=300
5
VCC
r=4.4k
r=4.4k
7
VCClo
Regulator idc=941u
GND
Bias
4
8
PDout
This is a current mode charge pump output. For connection to a passive RC loop filter for driving external varactor diode of 1stLO-OSC.
Source Control
9
PFD
ESD
FROM PFD
9
VCCdig
Supply voltage pin of digital portion of the chip.
Source
8
Sink Control
PFD
Sink
ESD
11
10
REFin
Input pin of reference frequency buffer. This pin should be equipped with external 27 MHz oscillator (e.g. TCXO).
r=20k ESD
9
r=20k
idc=9.7u
11
GNDdig
Ground pin of digital portion of the chip.
10 ESD r=500
r=500
r=50k
r=30k
idc=22u
c=5.4p
11
UPB1008K PIN FUNCTIONS
Pin No. Symbol Function and Application Internal Equivalent Circuit
28
12
I/Q Balance Control
The voltage on this pin controls the Q channel IF Amplifier Gain. Gain control of 2 dB can be achieved for 0~3 V. Leave open-circuited if not used.
Qgain
12
idc=23.5u Iref
idc=23.5u
CCCS
r=200k
+2dB
r=12k
-2dB
r=7.1k
r=7.1k
r=7.1k
r=7.1k
0V
1.5 V
3V
V
32
VCC
13
PD1
Standby mode control. Low=whole chip OFF & High=Whole chip ON.
13
ESD
r=28k ESD
11
14 15
2IFout-Q 2IFout-Qb
Differential ouptut pins of quadrature demodulator Q output. Adding a lowpass shunt capacitor between these pins will define the IF Bandwidth.
r=2k
28
r=2k
ESD
ESD
From 2nd Mixer
15,(26)
r=2k
14,(27)
idc=86u
idc=86u
ESD
ESD
32
16 17
DC offset Q DC offset Qb
DC offset compensation pin for C arm. A low pass capacitor shunt to Pin 17 is required. DC offset compensation pin for Q-bar arm. A low pass capacitor shunt to Pin 16 is required.
r=4k r=4k
28
ESD
ESD
From 2nd Mixer
r=150k
17,(24) r=20k
r=150k
c=9p 16,(25)
idc=84u
idc=84u
ESD
ESD
32
To offset amp
To channel amp
r=2k
UPB1008K PIN FUNCTIONS
Pin No. 18 19 20 21 22 23 Symbol GNDbb Qmag Qsign Isign Imag VCCbb Function and Application Ground pin of CMOS output driver. Digitized Q signal. Magnitude bit of 2-bit ADC output. Digitized Q signal. Sign bit of 2-bit ADC output Digitized I signal. Sign bit of 2-bit ADC output. Digitized I signal. Magnitude bit of 2-bit ADC output. Supply voltage pin of CMOS output driver. Internal Equivalent Circuit
23
r=21.5
From Comparator
r=5k
r=21.5 ESD
19, (20,21,22)
ESD
18
24 25 26 27
DCoffsetIb DCoffsetI 2IFout-Ib 2IFout-I
28 29
VCC if VAGC
DC offset compensation pin for I-bar arm. A low pass capacitor shunt to Pin 25 is required. DC offset compensation pin for I arm. A low pass capacitor shunt to Pin 24 is required. Differential output pins of quadrature demodulator I output. Adding a lowpass shunt capacitor between these pins will define the IF bandwidth. Supply voltage pin of analog portion of the chip. Gain control voltage pin of IF amplifier. This voltage performs reverse control,(i.e., VAGC up gain down). If this pin is left open, then it is default at maximum gain.
See pin 16 & 17 schematic
See pin 14 & 15 schematic
28
ESD
r=44k
r=300 To AGC Amp
30
Typical AGC Gain Response
0 -15 0.5 1.5 2
29
ESD
r=3k
32
VAGC (V)
28
30 31 32
IF-in1 IF-in2 GNDanalog
Differential input pins of 1st IF AGC amplifier Ground pin of analog portion of the chip.
From VAGC
r=4k
r=2k
r=2k
r=4k
AGC amp out
Regulator ESD
Bias
ESD 30
r=4k
r=4k
31
r=40
ESD r=1.42k r=1.42k
ESD
32
7
33 34
Mixout2 Mixout1
Differential output pins of RF mixer. This is an emitter follower output buffer, provide a 50 output load.
From Mixer
ESD 34 ESD c=1.67p
r=4k
33
Regulator c=1.67p r=111 ESD
ESD
r=4k
r=111
4
UPB1008K PIN FUNCTIONS
Pin No. Symbol Function and Application Internal Equivalent Circuit
35
Vref
Base-emitter junction voltage wth respect to ground. May be used for biasing an external discrete transistor. Regulation will develop PTAT current.
VCC
Bias
3
r=500
Regulator
ESD
GND 35 r=40k ESD
4
1
36
LNAbias
LNA output pin. External bias (VCC) and matching for gain is required.
See pin 2 schematic
UPB1008K
INTERNAL BLOCK DIAGRAM
GNDanalog LNA bias Mixout1 Mixout2
IFin2
IFin1
35
34
36
33
32
31
30
29
28
VCC if
VAGC
Vref
GND LNA LNAin VCCrf GNDLO 1stLO-OSC1 1stLO-OSC2 VCCLO PDout VCCdig
1 2 3 4
/2 /4
27 26 25 24 23
Vth
2ndIFoutl 2ndIFoutlb DCoffsetl DCoffsetlb VCCbb Imag Isign Qsign Qmag
5 6 7 8 9
PD /6/7 2-bit ADC
Vth
/2 2-bit ADC
22 21 20 19
/2
8
13
14
15
16
10
17 DCoffsetQb
12
2IFoutQ
I/Q Balance
DCoffsetQ
2IFoutQb
REFin
PD
ORDERING INFORMATION
Part Number UPB1008K-A Package 36 Pin plastic QFN
GNDdig
OUTLINE DIMENSIONS (Units in mm)
6.20.2 6.00.2
GNDbb
18
11
Package Outline QFN-36
Actual size
6.4 6.0
6.00.2
6.20.2
6.20.2
6.00.2
3.8 0.5
Pin 36 Pin 1
4 -CO.5
0.220.05 0.550.2
0.14 -0.05
6.00.2
1.0 MAX
6.20.2
+0.10
0.5
Caution: The island pins located on the corners are needed to fabricate products in our plant, but do not serve any other function. Consequently the island pins should not be soldered and should remain non-connection pins.
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
05/27/04
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.


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